Plasma processing apparatus and plasma processing method

Plasma processing apparatus and plasma processing method

  • CN 1,799,127 B
  • Filed: 05/31/2004
  • Issued: 06/27/2012
  • Est. Priority Date: 05/29/2003
  • Status: Active Grant
First Claim
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1. a plasma processing apparatus carries out plasma nitridation process to handled object, forms oxynitride film, it is characterized in that, comprising:

  • Plasma processing chamber is implemented plasma nitridation process in the inside of plasma process chamber to said handled object;

    The said handled object that handled object maintaining body, this handled object maintaining body will be configured in the said plasma processing chamber keeps;

    Plasma generating mechanism, this plasma generating mechanism energize discontinuously in said plasma processing chamber produces plasma in said plasma processing chamber;

    WithControl device;

    This control device is supplied with the said energy that is interrupted with impulse form;

    And carry out pulse control, making pulse frequency is that 10~

    100kHz, duty ratio are in 20~

    80% scopes, and in said plasma processing chamber, generating electron temperature is the plasma of 0.5~

    1eV.

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