Method of forming a low capacitance semiconductor device and structure therefor

Method of forming a low capacitance semiconductor device and structure therefor

  • CN 1,808,708 B
  • Filed: 09/16/2005
  • Issued: 05/30/2012
  • Est. Priority Date: 09/16/2004
  • Status: Active Grant
First Claim
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1. method that forms semiconductor device may further comprise the steps:

  • The substrate of first conductivity type with first surface is provided;

    On the first surface of substrate, form gate insulator;

    On gate insulator, form grid conductor;

    On grid conductor, form first insulating barrier, wherein first insulating barrier has the surface that separates with grid conductor;

    Form first opening to expose the part of gate insulator through first insulating barrier and through grid conductor;

    Forming insulator on the sidewall of first opening and on the part of the gate insulator that in first opening, exposes;

    Form first conductor on the insulator in first opening, and with any remainder in first conductor filled first opening, wherein first conductor basically with the surface co-planar of first insulating barrier;

    In first insulating barrier and grid conductor, form second opening and the 3rd opening;

    Second opening and the 3rd opening extend through grid conductor from first surface of insulating layer and expose gate insulator, wherein first opening the first that makes the insulating barrier of winning between second opening and the 3rd opening between first opening and second opening and the second portion that makes the insulating barrier of winning between first opening and the 3rd opening;

    Form first body region of second conductivity type through first through the second opening doped substrate;

    Through form second body region of second conductivity type through the second portion of the 3rd opening doped substrate, wherein first and second body region are separated mutually;

    The shading light part that also centers in second opening and the 3rd opening through warp second opening and the 3rd opening mixes respectively;

    In first body region and second body region, form first source region and second source region of first conductivity type respectively;

    Wherein the edge of this first source region and first body region separates, and the edge of this second source region and second body region separately;

    AndForm source conductor, the said source conductor and first and second source regions electrically contact, and electrically contact with first conductor in first opening.

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