Magnetoresistance random access memory array

Magnetoresistance random access memory array

  • CN 1,815,623 B
  • Filed: 12/02/2005
  • Issued: 03/06/2013
  • Est. Priority Date: 12/03/2004
  • Status: Active Grant
First Claim
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1. magnetoresistance random access memory array, described magnetoresistance random access memory array comprises:

  • One first conductor;

    One second conductor;

    One first storage unit comprises that one first magnetic resistance that is coupled to this first conductor is stacking;

    One second storage unit comprise that one second magnetic resistance that is coupled to this first conductor is stacking, and this second storage unit is adjacent along this first conductor and this first storage unit;

    One the 3rd storage unit comprise that one the 3rd magnetic resistance is stacking, and the 3rd storage unit is adjacent along this second conductor and this first storage unit;

    AndOne the 4th storage unit comprise that one the 4th magnetic resistance that is coupled to this first conductor is stacking, and the 4th storage unit is adjacent along this first conductor and this first storage unit;

    Wherein stacking being stacked on the first direction with this second magnetic resistance of this first magnetic resistance arranged in line, and stacking being stacked in the 3rd magnetic resistance of this first magnetic resistance arranged in line on the second direction, stacking being stacked on the third direction with the 4th magnetic resistance of this first magnetic resistance arranged in line, and this first direction and this second direction are not perpendicular, this third direction and this second direction are not perpendicular, and this first direction is not identical with this third direction;

    Wherein this second magnetic resistance is stacking, this first magnetic resistance is stacking, the stacking axis along this first conductor bearing of trend of the 4th magnetic resistance is staggered up and down.

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