RF pulsing of a narrow gap capacitively coupled reactor

RF pulsing of a narrow gap capacitively coupled reactor

  • CN 1,816,893 A
  • Filed: 04/29/2004
  • Published: 08/09/2006
  • Est. Priority Date: 05/06/2003
  • Status: Active Application
First Claim
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1. one kind is used for the layer on the wafer is carried out the device of plasma etching, comprising:

  • The capacitive coupling Processing Room;

    Gas source is connected with described capacitive coupling Processing Room fluid;

    First electrode is in described Processing Room;

    Second electrode is opened with described first electrode separation and relative with it;

    First radio-frequency power supply is electrically connected at least one in described first and second electrodes, and wherein said first radio-frequency power supply provides the radio-frequency power between 150kHz and the 10MHz;

    Second radio-frequency power supply is electrically connected at least one in described first and second electrodes, and wherein said second radio-frequency power supply provides the radio-frequency power between 12MHz and the 200MHz;

    AndFirst modulation controller is connected to described first radio-frequency power supply, and the control modulation of described first radio-frequency power supply is provided to the frequency between the 100kHz at 1kHz.

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