Semiconductor device and manufacturing method therefor

Semiconductor device and manufacturing method therefor

  • CN 1,819,172 A
  • Filed: 01/20/2006
  • Published: 08/16/2006
  • Est. Priority Date: 01/20/2005
  • Status: Active Application
First Claim
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1. method of making semiconductor device comprises:

  • Preparation has from the teeth outwards by the semiconductor element of the first metal the first metal layer and by the second metal metal substrate, this metal substrate has in its surface by the 4th metal the 4th metal level, and with this semiconductor element mounting on the surface of this metal substrate;

    Provide metal nano cream between the first metal layer and the 4th metal level, this metal nano cream is by being that 100nm or littler being distributed in the organic solvent by the 3rd metal fine particle form with average diameter;

    AndTo this semiconductor element that is provided with this metal nano cream therebetween and the heating of this metal substrate, perhaps heat and pressurize, thereby remove this solvent,Wherein, every kind in this first, third and fourth metal by any metal in gold, silver, platinum, copper, nickel, chromium, iron, lead and the cobalt, comprise at least a alloy in these metals or the mixture of these metal or alloy is made.

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