Photodiode and its preparing method and application in CMOS image sensor

Photodiode and its preparing method and application in CMOS image sensor

  • CN 1,828,947 A
  • Filed: 03/04/2005
  • Published: 09/06/2006
  • Est. Priority Date: 03/04/2005
  • Status: Active Application
First Claim
Patent Images

1. a photodiode comprises silicon substrate, SiGe absorbed layer, monocrystalline silicon layer, doped silicon layer, silicon oxide layer.

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