Masking methods

Masking methods

  • CN 1,839,465 A
  • Filed: 08/12/2004
  • Published: 09/27/2006
  • Est. Priority Date: 08/22/2003
  • Status: Active Grant
First Claim
Patent Images

1. masking method, it comprises the steps:

  • Be formed at the masking material that forms boron doped amorphous carbon on the suprabasil structural detail of semiconductor, described masking material comprises the boron at least about 0.5 atom %;

    Basically etching masking material anisotropically, with on described structural detail sidewall, effectively form boron doped amorphous carbon by the sidewall spacer of anisotropic etching;

    The described slider that uses boron doped amorphous carbon is as mask, and processing simultaneously is the substrate of close this slider;

    WithSubstrate is carried out after the described processing, the described slider of etching boron doped amorphous carbon from the substrate.

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