Techniques for patterning features in semiconductor devices

Techniques for patterning features in semiconductor devices

  • CN 1,849,698 B
  • Filed: 05/13/2004
  • Issued: 07/11/2012
  • Est. Priority Date: 09/12/2003
  • Status: Active Grant
First Claim
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1. one kind is carried out the method for composition to the one or more parts in the semiconductor device, and wherein said semiconductor device comprises substrate and be deposited on said on-chip antireflection material that this method comprises following step:

  • In the etched process of said antireflection material, reduce at least one critical dimension of said one or more parts;

    AndIn the etching process of said substrate, further reduce at least one critical dimension of said one or more parts.

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