Thin film transistor, display device and method for manufacturing electronic device

Thin film transistor, display device and method for manufacturing electronic device

  • CN 1,855,396 A
  • Filed: 04/28/2006
  • Published: 11/01/2006
  • Est. Priority Date: 04/28/2005
  • Status: Active Application
First Claim
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1. method for fabricating thin film transistor may further comprise the steps:

  • On glass substrate, form the based insulation film;

    On this based insulation film, form the pattern of the semiconductive thin film that comprises amorphous silicon;

    Be arranged on more than or equal to 100 degrees centigrade and be lower than under the temperature conditions of strain point of glass substrate in the glass substrate temperature, by the semiconductive thin film that comprises amorphous silicon being carried out plasma oxidation or pecvd nitride forms grid insulating film, andOn this grid insulating film, form gate electrode.

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