Production of non-volatile memory

Production of non-volatile memory

  • CN 1,855,440 A
  • Filed: 04/18/2005
  • Published: 11/01/2006
  • Est. Priority Date: 04/18/2005
  • Status: Active Application
First Claim
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1. , a kind of manufacture method of non-volatility memorizer comprises:

  • One substrate is provided, and this substrate can be divided into a memory cell areas and a periphery circuit region at least;

    Form one first end dielectric layer on this memory cell areas, and form one second end dielectric layer on this periphery circuit region, the thickness of this second end dielectric layer is greater than the thickness of this first end dielectric layer;

    In this substrate, form a charge immersing layer;

    On this charge immersing layer, form a top dielectric layer;

    On this top dielectric layer, form a conductor layer;

    On this conductor layer, form a patterned mask layer;

    With this patterned mask layer is mask, remove this conductor layer of part, this top dielectric layer, this charge immersing layer, this first end dielectric layer, this second end dielectric layer, to form a first grid structure in this memory cell areas, form a second grid structure in this periphery circuit region;

    AndIn this substrate of this first grid structure and these second grid structure both sides, form one source pole district/drain region respectively.

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