Semiconductor device and method of manufacturing same

Semiconductor device and method of manufacturing same

  • CN 1,855,467 A
  • Filed: 03/27/2006
  • Published: 11/01/2006
  • Est. Priority Date: 03/25/2005
  • Status: Active Grant
First Claim
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1. a semiconductor device is characterized in that, comprising:

  • Semiconductor chip;

    Wiring layer, it is formed on the described semiconductor chip;

    Antireflection layer, it is formed on the part of described wiring layer;

    Passivation layer, it covers described wiring layer and antireflection layer,Described passivation layer has the end of not exposing described antireflection layer and the peristome that exposes the part of described wiring layer.

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