Multi-purpose metallic sealing

Multi-purpose metallic sealing

  • CN 1,856,874 A
  • Filed: 09/01/2004
  • Published: 11/01/2006
  • Est. Priority Date: 09/02/2003
  • Status: Active Application
First Claim
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1. , a kind ofly go up to make the method for a thin layer (104) that is formed by the semiconductor material at a substrate (107) that is called final substrate, described final substrate is the conductive substrates that a silicon substrate or is coated with a silicon thin film, and described method comprises:

  • Be called one and form described semiconductor material layer on the strutting piece of initial strutting piece (101);

    Assemble described thin layer and described final substrate by metal bonding;

    For the purpose of carrying out metal bonding, making a metal deposit (105,106) on the described thin layer and on the described final substrate;

    Along a weak interface (103) described initial strutting piece is split.

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