Thin film transistor and making method thereof

Thin film transistor and making method thereof

  • CN 1,866,482 B
  • Filed: 06/16/2006
  • Issued: 06/27/2012
  • Est. Priority Date: 06/16/2006
  • Status: Active Grant
First Claim
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1. method of making thin-film transistor, it comprises:

  • Form four thin layers continuously in substrate, this four thin layer is first conductive layer, insulating barrier, semiconductor layer and second conductive layer from the bottom to top in regular turn;

    Carry out first photoetching-etch process, with this four thin layer of while patterning, and make this semiconductor layer form semiconductor island, and this first conductive layer forms gate electrode;

    AndCarry out laser ablation process, defining channel pattern, and remove this second conductive layer of part, and make this second conductive layer form not contacted source electrode and drain electrode in this four thin layer.

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