Nitride semiconductor light emitting device

Nitride semiconductor light emitting device

  • CN 1,866,559 A
  • Filed: 05/17/2006
  • Published: 11/22/2006
  • Est. Priority Date: 05/18/2005
  • Status: Active Application
First Claim
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1. nitride semiconductor photogenerator comprises:

  • Substrate;

    N type nitride semiconductor layer is formed on the described substrate;

    Active layer is formed on the described n type nitride semiconductor layer;

    P type nitride semiconductor layer is formed on the described active layer;

    Transparency electrode is formed on the described p type nitride semiconductor layer;

    P type pressure welding electrode forms to be connected on the described transparency electrode;

    AndN type electrode is formed by the compound that comprises aluminium or silver, and is formed on the described n type nitride semiconductor layer.

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