Manufacturing method of thin-film transistor

Manufacturing method of thin-film transistor

  • CN 1,870,234 B
  • Filed: 06/15/2006
  • Issued: 07/20/2011
  • Est. Priority Date: 06/15/2006
  • Status: Active Grant
First Claim
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1. the manufacture method of a thin-film transistor comprises:

  • Form conductive layer on substrate;

    Form pattern mask on this conductive layer, to be covered in the zone of desire formation thin-film transistor on this substrate;

    Remove not this conductive layer by this pattern mask covered;

    Divest legal adopted laser hole in this pattern mask with laser, with this conductive layer of exposed portions serve, and this laser hole forms the channel region of this thin-film transistor corresponding to desire;

    AndThis conductive layer that this laser hole of etching is exposed, with the drain electrode that forms this thin-film transistor and source electrode in the both sides of this channel region.

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