Semiconductor device and its manufacturing method

Semiconductor device and its manufacturing method

  • CN 1,881,594 A
  • Filed: 01/20/1997
  • Published: 12/20/2006
  • Est. Priority Date: 01/19/1996
  • Status: Active Grant
First Claim
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1. semiconductor device comprises:

  • Be provided on the substrate and the channel region between source area and drain region;

    Be provided on the described substrate and the adjacent gate electrode that provides, between described gate electrode and described channel region, gate insulating film arranged with described channel region;

    First dielectric film comprises the silicon nitride that is provided on described channel region and described source area and described drain region and described gate electrode and the described gate insulating film;

    Second dielectric film, be provided on described first dielectric film and comprise resin with on described first dielectric film, provide first the leveling the surface;

    Be connected with described drain region and be provided at drain electrode on described second dielectric film;

    Be connected with described source area and be provided at source electrode on described second dielectric film;

    The 3rd dielectric film, be provided on described drain electrode and the described source electrode and comprise resin with on described drain electrode and described source electrode, provide second the leveling the surface;

    Be provided at the black matrix" on described the 3rd dielectric film;

    The 4th dielectric film, be provided on the described black matrix" and comprise resin with on described black matrix", provide the 3rd the leveling the surface;

    Pixel electrode is connected with one of described source electrode with described drain electrode and is provided on described the 4th dielectric film.

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