Semiconductor device and its manufacturing method

Semiconductor device and its manufacturing method

  • CN 1,881,595 B
  • Filed: 01/20/1997
  • Issued: 02/08/2012
  • Est. Priority Date: 01/19/1996
  • Status: Active Grant
First Claim
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1. active matrix EL display unit with display part comprises:

  • Substrate with insulating surface;

    WithA plurality of thin-film transistors in the above display part of said substrate;

    Each thin-film transistor has through the film formed active layer of composition crystallized silicon, and the thickness of this crystallinity silicon fiml is Wherein said crystallinity silicon fiml comprises a plurality of crystal grain in the whole zone of running through this crystallinity silicon fiml, and each said crystal grain is put radial growth from each of a plurality of points of the whole surface distributed that runs through said crystallinity silicon fiml, andWherein the crystal growth direction in said active layer has nothing in common with each other for each thin-film transistor of said a plurality of thin-film transistors.

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