Light-emitting diode and its preparation method

Light-emitting diode and its preparation method

  • CN 1,881,624 A
  • Filed: 06/15/2005
  • Published: 12/20/2006
  • Est. Priority Date: 06/15/2005
  • Status: Active Application
First Claim
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1. light-emitting diode, comprise Sapphire Substrate, the GaN nucleating layer, GaN resilient coating, n type GaN ohmic contact layer, InGaN/GaN multiple quantum well active layer, p-A1GaN ducting layer, the p type GaN ohmic contact layer that on Sapphire Substrate, form successively, the n type Ohm contact electrode of on n type GaN ohmic contact layer, drawing, the p type ohmic contact transparency electrode of on p type GaN ohmic contact layer, drawing, it is characterized in that the preparation material of described p type ohmic contact transparency electrode adopts indium tin oxide.

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