Semiconductor element and method for forming semiconductor element

Semiconductor element and method for forming semiconductor element

  • CN 1,885,557 B
  • Filed: 12/26/2005
  • Issued: 07/06/2011
  • Est. Priority Date: 06/21/2005
  • Status: Active Grant
First Claim
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1. a semiconductor element is characterized in that, described semiconductor element comprises:

  • The semiconductor substrate;

    One gate dielectric is positioned on the intrabasement raceway groove of this semiconductor;

    One gate electrode is positioned on this gate dielectric;

    One light dope source electrode or drain region, the edge of this gate electrode that aligns, wherein this lightly doped region comprises p type impurity;

    One grid gap wall is positioned at the side of this gate electrode;

    One source pole or drain region were located in this semiconductor-based end, and the edge of this grid gap wall of aliging, and wherein this source electrode or drain region comprise p type impurity;

    AndOne diffusion delays zone comprises a diffusion delays material, the edge of this grid gap wall of aliging, and wherein this diffusion delays zone is darker than this source electrode or drain region,Wherein an exposed portion at this semiconductor-based end is the amorphous state that is injected with germanium or xenon.

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