Image sensor and method for fabricating the same

Image sensor and method for fabricating the same

  • CN 1,897,289 A
  • Filed: 06/06/2006
  • Published: 01/17/2007
  • Est. Priority Date: 07/11/2005
  • Status: Active Grant
First Claim
Patent Images

1. imageing sensor comprises:

  • The first conductivity type substrate comprises the groove that is formed in the described first conductivity type substrate predetermined portions;

    Second conductivity type impurity region is used for photodiode, is formed under the basal surface of the described groove in the described first conductivity type substrate;

    AndThe first conductivity type epitaxial loayer is used for photodiode, is embedded in the described groove.

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