Stress-tuned, single-layer silicon nitride film and deposition method thereof

Stress-tuned, single-layer silicon nitride film and deposition method thereof

  • CN 1,914,717 A
  • Filed: 01/25/2005
  • Published: 02/14/2007
  • Est. Priority Date: 01/29/2004
  • Status: Active Application
First Claim
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1. method at the stress that carries out between depositional stage regulating the individual layer silicon nitride film on the substrate comprises:

  • Substrate is placed plasma enhanced chemical vapor deposition chamber, wherein said plasma enhanced chemical vapor deposition chamber can be handled the substrate that diameter is about 200mm, and described plasma enhanced chemical vapor deposition chamber have in being operated in from about 13MHz to about 14MHz frequency range high-frequency RF power input source and be operated in from about 300kHz to about 400kHz frequency range in low frequency RF power input source;

    Nominal value in described high-frequency RF power input source is set to from about 10W to about 200W scope;

    Nominal value in described low frequency RF power input source is set to from about 0W to about 100W scope;

    Nominal value in described plasma enhanced chemical vapor deposition chamber pressure is set to from about 2Torr to about 10Torr scope;

    Described plasma enhanced chemical vapor deposition heater is set to provide the temperature that has from the underlayer temperature of about 375 ℃

    of nominal values in about 525 ℃

    of scopes;

    AndBy chemical vapour deposition (CVD) in single deposition step on described substrate the silicon nitride film of deposit thickness scope from about 300 dusts to about 1000 dusts, thereby make the silicon nitride film of described deposition have the stress of nominal value range from pact-1.4GPa to pact+1.5GPa.

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