Method of reading NAND memory to compensate for coupling between storage elements

Method of reading NAND memory to compensate for coupling between storage elements

  • CN 1,926,635 B
  • Filed: 01/13/2005
  • Issued: 12/26/2012
  • Est. Priority Date: 01/26/2004
  • Status: Active Grant
First Claim
Patent Images

1. one kind is used to read the method with the nonvolatile memory of row and row layout, and it comprises following steps:

  • Select a word line WLn to be read;

    Read the adjacent word line (WLn+1) that behind word line WLn, writes;

    Confirm said adjacent word line whether have one be higher than one the inspection voltage threshold voltage;

    WithIf the data mode of said adjacent word line is higher than said inspection voltage, read position selected among the word line WLn through optionally regulating at least one pre-charge voltage.

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