Method of semiconductor thin film crystallization and semiconductor device fabrication

Method of semiconductor thin film crystallization and semiconductor device fabrication

  • CN 1,933,104 A
  • Filed: 03/16/2006
  • Published: 03/21/2007
  • Est. Priority Date: 09/14/2005
  • Status: Active Application
First Claim
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1. method of making semiconductor element is characterized in that comprising:

  • Substrate is provided;

    On this substrate, form amorphous silicon layer;

    On this amorphous silicon layer, form and protect thermosphere;

    Patterning should be protected thermosphere;

    AndShine this guarantor'"'"'s thermosphere of patterning.

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