Semiconductor optical modulator having a quantum well structure

Semiconductor optical modulator having a quantum well structure

  • CN 1,933,264 A
  • Filed: 05/31/2006
  • Published: 03/21/2007
  • Est. Priority Date: 05/31/2005
  • Status: Active Application
First Claim
Patent Images

1. , a kind of optical modulator comprises:

  • First ducting layer and barrier layer;

    AndBe clipped in the quantum well layer between this first ducting layer and the barrier layer, wherein this quantum well layer has graded component, and this graded component changes the band-gap energy of this quantum well layer between at least one the band-gap energy in smallest bandgap energy and this first ducting layer and barrier layer.

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