Compound semiconductor light-emitting diode

Compound semiconductor light-emitting diode

  • CN 1,934,717 A
  • Filed: 03/14/2005
  • Published: 03/21/2007
  • Est. Priority Date: 03/15/2004
  • Status: Active Application
First Claim
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1. compound semiconductor light-emitting diode, the current-diffusion layer that comprises the luminescent layer that constitutes by the III-V compound semiconductor and be arranged on the described luminescent layer and constitute by the III-V compound semiconductor, it is characterized in that, described current-diffusion layer is made of the semiconductor based on boron phosphide of conduction, and the room temperature band gap of described current-diffusion layer is wider than the room temperature band gap of described luminescent layer.

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