Method for depositing material atomic layer for semiconductor device by using atmosphere

Method for depositing material atomic layer for semiconductor device by using atmosphere

  • CN 1,937,175 A
  • Filed: 09/20/2005
  • Published: 03/28/2007
  • Est. Priority Date: 09/20/2005
  • Status: Active Grant
First Claim
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1. method that is used for ald, this method comprises:

  • A plurality of substrates are placed in the box;

    Take out in described a plurality of substrate;

    A described undercoat is added on the mobile member, and this mobile member is coupled to a plurality of gas distribution member, and described a plurality of gas distribution member are numbered as 1 to N, and wherein N is an integer;

    AndMove described substrate by mobile member, from first gas distribution member to the N gas distribution member surface of described substrate is exposed to described a plurality of gas distribution member one or more with serial mode, simultaneously substrate is kept under atmospheric pressure;

    AndWhen described surface is moved on described mobile member and during in described a plurality of gas distribution member one or more, formed the atom tunic that overlies described surface.

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