Method of fabricating a semiconductor device

Method of fabricating a semiconductor device

  • CN 1,937,250 A
  • Filed: 11/17/1999
  • Published: 03/28/2007
  • Est. Priority Date: 11/17/1998
  • Status: Abandoned Application
First Claim
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1. a semiconductor device is characterized in that, has the top grid type LDD structure that is positioned on the substrate, comprising:

  • Last grid;

    Following grid, the one side is on source electrode one side and drain electrode one side at least, and described drain electrode is stretched out from the described grid of going up, and described grid down closely contacts the location with the described grid of going up;

    Semiconductor portions has;

    grid and the described down grid channel region below just on described, the extension of described bottom electrode just below the LDD zone, and source region and need not describedly go up the drain region of grid and bottom electrode covering;

    Described grid down comprises the low resistance metal material;

    With,The described grid of going up comprises high desnity metal material or hydrogen absorption metal, and, have and during mixing up, inject hydrionic high screening ability.

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