Semiconductor light-emitting device

Semiconductor light-emitting device

  • CN 1,941,444 A
  • Filed: 09/26/2006
  • Published: 04/04/2007
  • Est. Priority Date: 09/30/2005
  • Status: Active Grant
First Claim
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1. semiconductor light-emitting elements, this semiconductor light-emitting elements has:

  • the illuminating part that forms on Semiconductor substrate, this illuminating part are made of n type coating layer, active layer and p type coating layer at least;

    The As that forms on described illuminating part is a contact layer, and this contact layer has been added more than or equal to 1 * 10 19/ cm 3P type dopant;

    The current extending that on described contact layer, forms, this current extending is made of the nesa coating of metal oxide materials;

    It is characterized in that, between described contact layer and described p type coating layer or in described p type coating layer, formed main component by V group element and be the resilient coating that the unadulterated III/V family semiconductor of P (phosphorus) constitutes.

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