Method of growing SiC single crystal and SiC single crystal grown by same

Method of growing SiC single crystal and SiC single crystal grown by same

  • CN 1,950,548 A
  • Filed: 05/13/2005
  • Published: 04/18/2007
  • Est. Priority Date: 05/14/2004
  • Status: Active Application
First Claim
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1. SiC method for monocrystal growth, be included in the epitaxial growth plane that makes the 4H-SiC single crystalline substrate with respect to (0001) face of 4H-SiC monocrystalline at<

  • 11-20 tilt with at least 12 degree and the drift angles that are lower than 30 degree on the direction of principal axis in by the epitaxy 4H-SiC monocrystalline of on described substrate, growing.

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