There is the thin film transistor substrate improving interlayer adhesion

There is the thin film transistor substrate improving interlayer adhesion

  • CN 1,953,186 B
  • Filed: 05/16/2006
  • Issued: 08/19/2015
  • Est. Priority Date: 10/18/2005
  • Status: Active Grant
First Claim
Patent Images

1. a thin film transistor substrate, comprising:

  • Substrate;

    To be arranged on substrate and the thin-film transistor be connected with data wire with gate line;

    Cover film transistor is with the organic protection layer of protective film transistor;

    AndThe inorganic insulation layer formed between gate line and data wire,Wherein said thin-film transistor comprises the gate electrode be connected with described gate line, the source electrode be connected with described data wire, drain electrode, the interlayer insulating film that is formed at the gate insulator between active layer and gate electrode and is arranged between described source electrode and described gate electrodeWherein form inorganic insulation layer, make the contact-making surface of itself and organic protection layer have continuous print relief pattern, and remaining surface has planar pattern.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×