Semiconductor device and manufacturing method therof

Semiconductor device and manufacturing method therof

  • CN 1,959,979 A
  • Filed: 11/02/2006
  • Published: 05/09/2007
  • Est. Priority Date: 11/02/2005
  • Status: Active Application
First Claim
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1. semiconductor device comprises:

  • Insulating barrier has the ground floor that contains fluorine and the second layer that contains the oxygen enrichment silicon with dangling bonds;

    AndMetal interconnected, be formed on the described insulating barrier.

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