Semiconductor device

Semiconductor device

  • CN 1,959,979 B
  • Filed: 11/02/2006
  • Issued: 05/12/2010
  • Est. Priority Date: 11/02/2005
  • Status: Active Grant
First Claim
Patent Images

1. semiconductor device comprises:

  • The interlayer dielectric layer, the groove that has via and communicate with this via;

    Metal interconnected, be formed in described via and the described groove;

    The fluorine doped silicate glass layer, promptly fsg layer is formed on the described interlayer dielectric layer, and is formed in the described metal interconnected first, and contains fluorine;

    First silicon oxide layer is formed on the described metal interconnected second portion, and is formed in the first of described fsg layer, and contains oxygen enrichment silicon, contains silane in described oxygen enrichment silicon, and the fluorine that contains in described silane and the described fsg layer reacts;

    Metal pad is formed on described first silicon oxide layer;

    The undoped silicate glassy layer, promptly the USG layer is formed on the second portion of described fsg layer, and is formed on the part of described metal pad, and contains fluorine;

    Second silicon oxide layer is formed on the described USG layer, and contains oxygen enrichment silicon, contains silane in described oxygen enrichment silicon, and the fluorine that contains in described silane and the described USG layer reacts;

    AndPassivation layer is formed on described second silicon oxide layer.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×