Vertically structured gan type led device

Vertically structured gan type led device

  • CN 1,971,955 A
  • Filed: 11/23/2006
  • Published: 05/30/2007
  • Est. Priority Date: 11/24/2005
  • Status: Active Application
First Claim
Patent Images

1. one kind vertically based on the light-emitting diode (LED) of gallium nitride (GaN), comprising:

  • The n electrode;

    N type GaN layer is formed under the described n electrode;

    Active layer is formed under the described n type GaN layer;

    P type GaN layer is formed under the described active layer, described p type GaN layer have not with surface that described active layer contacts on the first uneven structure that forms;

    P type reflecting electrode is formed under the described p type GaN with described first uneven structure;

    AndSupporting layer is formed under the described p type reflecting electrode.

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