Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

  • CN 1,972,044 A
  • Filed: 11/17/2006
  • Published: 05/30/2007
  • Est. Priority Date: 11/18/2005
  • Status: Active Application
First Claim
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1. , a kind of semiconductor device comprises:

  • The r surface sapphire substrate;

    Al xGa (1-x)N (0≤

    x<

    1) resilient coating is comprising N under 900-1100 ℃

    temperature 2Gaseous environment under, epitaxial growth is to the thickness of the scope of 100-20000 

    on described r surface sapphire substrate;

    And The one a face GaN layer is formed on the described resilient coating.

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