Non-volatile floating gate memory cells with polysilicon storage unit and fabrication methods thereof

Non-volatile floating gate memory cells with polysilicon storage unit and fabrication methods thereof

  • CN 1,988,179 A
  • Filed: 08/22/2006
  • Published: 06/27/2007
  • Est. Priority Date: 12/22/2005
  • Status: Active Application
First Claim
Patent Images

1. non-volatile floating gate memory cells with polysilicon storage unit comprises:

  • Semiconductor substrate with one first conductivity type;

    The first area is positioned on this Semiconductor substrate, has second conductivity type that is different from this first conductivity type;

    Second area with this second conductivity type is positioned on this Semiconductor substrate, and isolates with this first area;

    Channel region connects this first area and this second area, as the electric charge raceway groove;

    Dielectric layer is arranged on this channel region;

    The control grid is arranged on this dielectric layer;

    Tunnel dielectric layer is arranged on this Semiconductor substrate and this control grid;

    AndTwo Charge Storage points are arranged on this tunnel dielectric layer, are isolated from each other and are positioned at the sidewall opposite end of this control grid.

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