Method of manufacturing a complementary metal oxide silicon image sensor

Method of manufacturing a complementary metal oxide silicon image sensor

  • CN 1,992,203 B
  • Filed: 12/22/2006
  • Issued: 07/18/2012
  • Est. Priority Date: 12/29/2005
  • Status: Active Grant
First Claim
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1. the manufacturing approach of a cmos image sensor, this method may further comprise the steps:

  • On substrate, form after the pad coating oxide skin(coating) and nitride layer;

    Etching and the part of removing on the edge that this oxide skin(coating) and this nitride layer be positioned at this substrate;

    And expose this pad through this oxide skin(coating) of etching and this nitride layer, and clean this pad that exposes through first cineration step, solvent clean step and second cineration step;

    Coating pad protective layer;

    Carry out hydrogen annealing technology;

    Carry out lenticule technology, flatening process and color filter array technology;

    AndRemove the pad protective layer of welding disking area.

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