Thin film transistor and manufacturing method thereof

Thin film transistor and manufacturing method thereof

  • CN 1,992,349 A
  • Filed: 06/14/2006
  • Published: 07/04/2007
  • Est. Priority Date: 12/28/2005
  • Status: Active Application
First Claim
Patent Images

1. , a kind of thin-film transistor comprises:

  • Be arranged on the porous region between source electrode and the drain electrode, this porous region comprises semi-conducting material;

    AndBe positioned at the grid on the porous region.

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