Tmr current sensor

Tmr current sensor

CN
  • CN 202,939,205 U
  • Filed: 11/26/2012
  • Issued: 05/15/2013
  • Est. Priority Date: 11/26/2012
  • Status: Active Grant
First Claim
Patent Images

1. a TMR current sensor, it is characterized in that:

  • this TMR current sensor comprises chip (1), printed circuit board (PCB) (2), dead ring (3) and magnetic shield ring (4);

    Described dead ring (3) is located in described magnetic shield ring (4), the interior space of described dead ring (3) is passed for current lead to be measured, described chip (1) is encapsulated on described printed circuit board (PCB) (2), described chip (1) and described printed circuit board (PCB) (2) are located in described magnetic shield ring (4), and described chip (1) and described printed circuit board (PCB) (2) are positioned between described dead ring (3) and described magnetic shield ring (4);

    The circuit structure of described chip (1) is Wheatstone bridge (6), described Wheatstone bridge (6) comprises the first brachium pontis (61), the second brachium pontis (62), the 3rd brachium pontis (63) and the 4th brachium pontis (64), each brachium pontis of described Wheatstone bridge (6) comprises at least one TMR element (7), described the first brachium pontis (61) is identical with the TMR element (7) of described the second brachium pontis (62), and described the 3rd brachium pontis (63) is identical with the TMR element (7) of described the 4th brachium pontis (64);

    Described TMR element (7) is multi-layer film structure, described TMR element (7) comprises the insulation course (72) be deposited on successively on substrate (71), pinning layer (73), nailed layer (74), tunnel barrier layer (75) and magnetic free layer (76), described magnetic free layer (76) is ferromagnetic layer, and the magnetic moment direction (78) of described magnetic free layer (76) can change with the change of the size and Orientation of external magnetic field, described nailed layer (74) is ferromagnetic layer or by ferromagnetic layer, the composite bed that Ru layer and ferromagnetic layer form, the magnetic moment direction (77) of described nailed layer (74) is pinned at a direction by described pinning layer (73), and the magnetic moment direction (77) that is more than or equal to the range of TMR element (7) and is less than described nailed layer (74) under the external magnetic field of Saturation field of nailed layer (74) at numerical value can remain unchanged, described pinning layer (73) is inverse ferric magnetosphere.

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