Single crystal growing furnace for vertical pulling method production silicon single crystal rod

Single crystal growing furnace for vertical pulling method production silicon single crystal rod

  • CN 206,736,402 U
  • Filed: 07/11/2016
  • Issued: 12/12/2017
  • Est. Priority Date: 07/11/2016
  • Status: Active Grant
First Claim
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1. for the single crystal growing furnace of vertical pulling method production silicon single crystal rod, including body of heater (1), graphite crucible is provided with inside the body of heater (1)(2), graphite crucible (2) bottom is mutually fixed by crucible axis (3) and body of heater (1) bottom, is provided with the graphite crucible (2)Silica crucible (4), graphite crucible (2) outside are provided with side heater (5), aspirating hole are provided with body of heater (1) side wall(6), in addition to tunger tube (7) and argon gas source (15), the argon gas source (15) are connected with tunger tube (7) by air inlet pipe (14),The end of the tunger tube (7) is extend into silica crucible (4) through body of heater (1), it is characterised in that:

  • On the tunger tube (7)Flow control valve (8) is provided with, controlling switch (9) is connected with the flow control valve (8), is connected on the controlling switch (9)It is connected to timer (10).

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