Semiconductor structure and fabrication method thereof
First Claim
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1. A method for fabricating a semiconductor structure, comprising:
- providing a plurality of fins on a semiconductor substrate;
forming an anti-diffusion layer, containing anti-diffusion ions, in the fins;
forming an anti-punch through layer after forming the anti-diffusion layer, containing anti-punch through ions, in the fins, a top surface of the anti-punch through layer being below a top surface of the anti-diffusion layer, and the anti-diffusion layer preventing the anti-punch through ions from diffusing toward tops of the fins; and
performing a thermal annealing process.
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Abstract
The present disclosure provides semiconductor structures and fabrication methods thereof. An exemplary fabrication method includes providing a plurality of fins on a semiconductor substrate; forming an anti-diffusion layer, containing anti-diffusion ions, in the fins; forming an anti-punch through layer, containing anti-punch through ions, in the fins, a top surface of the anti-punch through layer being below a top surface of the anti-diffusion layer, and the anti-diffusion layer preventing the anti-punch through ions from diffusing toward tops of the fins; and performing a thermal annealing process.
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Citations
20 Claims
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1. A method for fabricating a semiconductor structure, comprising:
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providing a plurality of fins on a semiconductor substrate; forming an anti-diffusion layer, containing anti-diffusion ions, in the fins; forming an anti-punch through layer after forming the anti-diffusion layer, containing anti-punch through ions, in the fins, a top surface of the anti-punch through layer being below a top surface of the anti-diffusion layer, and the anti-diffusion layer preventing the anti-punch through ions from diffusing toward tops of the fins; and performing a thermal annealing process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor structure, comprising:
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a plurality of fins formed on a semiconductor substrate; a plurality of isolation structures formed between adjacent fins on the semiconductor substrate; an anti-diffusion layer, containing anti-diffusion ions, formed in the fins, wherein top surfaces of the isolation structures are coplanar with a bottom surface of the anti-diffusion layer; and an anti-punch through layer, containing anti-punch through ions, formed in the fins, a top surface of the anti-punch through layer being below a top surface of the anti-diffusion layer, and the anti-diffusion layer preventing the anti-punch through ions from diffusing toward tops of the fins. - View Dependent Claims (15, 16, 17, 18)
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19. A semiconductor structure, comprising:
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a plurality of fins formed on a semiconductor substrate; an anti-diffusion layer, containing anti-diffusion ions, formed in the fins; and an anti-punch through layer, containing anti-punch through ions, formed in the fins, a top surface of the anti-punch through layer being below a top surface of the anti-diffusion layer, and the anti-diffusion layer preventing the anti-punch through ions from diffusing toward tops of the fins, wherein; a thickness of the anti-punch through layer is in a range of approximately 20 Å
-60 Å
;the anti-punch through ions are one of P ions, As ions, B ions and F ions; a concentration of the anti-punch through ions is in a range of approximately 1.0×
1013 atoms/cm2 1.0×
1015 atoms/cm2. - View Dependent Claims (20)
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Specification