Semiconductor device, battery monitoring system, and method for activating semiconductor device
First Claim
1. A semiconductor device comprising:
- an activation circuit, to which an activation signal output from an outside of the semiconductor device is input, that operates at an operation voltage within a range that is equal to or more than a ground potential of a connected external battery and is equal to or lower than a power source potential of the battery, and that outputs an inner activation signal based on the activation signal;
a regulator, to which the inner activation signal is input, that generates and outputs a driving voltage from the power source potential;
a boosting circuit, connected to the regulator, that generates and outputs a boosted voltage that is equal to or more than the driving voltage;
a driving circuit, connected to the boosting circuit, that operates at an operation voltage within a range that is equal to or more than the power source potential and is equal to or lower than a potential of the boosted voltage, and that outputs the activation signal to another semiconductor device according to the inner activation signal;
a first communication circuit, to which a first communication signal output from the outside is input, that operates at an operation voltage within a range that is equal to or more than the ground potential and is equal to or lower than a potential of the driving voltage, and that outputs an inner communication signal based on the first communication signal; and
a second communication circuit, to which the inner communication signal is input, that operates at an operation voltage within a range that is equal to or more than the power source potential and is equal to or lower than a potential of a driving voltage of the other semiconductor device, and that outputs a second communication signal based on the inner communication signal to the other semiconductor device,wherein the driving circuit comprisesa level shifter that converts a potential of a signal according to the activation signal,a PMOS transistor including a control terminal to which a first output of the level shifter is input, one terminal connected to a signal line through which the boosted voltage is supplied, and another terminal connected to an output terminal, andan NMOS transistor including a control terminal to which a second output of the level shifter is input, one terminal connected to the another terminal of the PMOS transistor and the output terminal, and another terminal connected to a signal line through which the power source potential is supplied.
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Accused Products
Abstract
A semiconductor device, a battery monitoring system, and a method for activating the semiconductor device that may reduce current consumption in standby state. An integrated circuit (IC) of the semiconductor device includes an activation circuit that uses a ground of the IC as ground and a power source voltage of the IC as its power source, and a driving circuit that uses the power source voltage as ground and a boosted voltage output from a boosting circuit as its power source. In the IC, only the activation circuit enters an operation state in a standby state, and when recovered from the standby state, causes the activation circuit to make inner circuits of the IC enter the operation state based on an activation signal. When all the inner circuits enter the operation state, the driving circuit outputs the activation signal to the activation circuit of an upper IC.
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Citations
12 Claims
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1. A semiconductor device comprising:
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an activation circuit, to which an activation signal output from an outside of the semiconductor device is input, that operates at an operation voltage within a range that is equal to or more than a ground potential of a connected external battery and is equal to or lower than a power source potential of the battery, and that outputs an inner activation signal based on the activation signal; a regulator, to which the inner activation signal is input, that generates and outputs a driving voltage from the power source potential; a boosting circuit, connected to the regulator, that generates and outputs a boosted voltage that is equal to or more than the driving voltage; a driving circuit, connected to the boosting circuit, that operates at an operation voltage within a range that is equal to or more than the power source potential and is equal to or lower than a potential of the boosted voltage, and that outputs the activation signal to another semiconductor device according to the inner activation signal; a first communication circuit, to which a first communication signal output from the outside is input, that operates at an operation voltage within a range that is equal to or more than the ground potential and is equal to or lower than a potential of the driving voltage, and that outputs an inner communication signal based on the first communication signal; and a second communication circuit, to which the inner communication signal is input, that operates at an operation voltage within a range that is equal to or more than the power source potential and is equal to or lower than a potential of a driving voltage of the other semiconductor device, and that outputs a second communication signal based on the inner communication signal to the other semiconductor device, wherein the driving circuit comprises a level shifter that converts a potential of a signal according to the activation signal, a PMOS transistor including a control terminal to which a first output of the level shifter is input, one terminal connected to a signal line through which the boosted voltage is supplied, and another terminal connected to an output terminal, and an NMOS transistor including a control terminal to which a second output of the level shifter is input, one terminal connected to the another terminal of the PMOS transistor and the output terminal, and another terminal connected to a signal line through which the power source potential is supplied. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
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an activation circuit, to which an activation signal output from an outside of the semiconductor device is input, that operates at an operation voltage within a range that is equal to or more than a ground potential of a connected external battery and is equal to or lower than a power source potential of the battery, and that outputs an inner activation signal based on the activation signal; a regulator, to which the inner activation signal is input, that generates and outputs a driving voltage from the power source potential; a boosting circuit, connected to the regulator, that generates and outputs a boosted voltage that is equal to or more than the driving voltage; a driving circuit, connected to the boosting circuit, that operates at an operation voltage within a range that is equal to or more than the power source potential and is equal to or lower than a potential of the boosted voltage, and that outputs the activation signal to another semiconductor device according to the inner activation signal; a first communication circuit, to which a first communication signal output from the outside is input, that operates at an operation voltage within a range that is equal to or more than the ground potential and is equal to or lower than a potential of the driving voltage, and that outputs an inner communication signal based on the first communication signal; and a second communication circuit, to which the inner communication signal is input, that operates at an operation voltage within a range that is equal to or more than the power source potential and is equal to or lower than a potential of a driving voltage of the other semiconductor device, and that outputs a second communication signal based on the inner communication signal to the other semiconductor device, wherein the driving circuit comprises a level shifter that converts a potential of a signal according to the activation signal, a first PMOS transistor including a control terminal to which a first output of the level shifter is input, one terminal connected to a signal line through which the boosted voltage is supplied, and another terminal connected to an output terminal; and a second PMOS transistor including a control terminal to which a second output of the level shifter is input, one terminal connected to the another terminal of the first PMOS transistor and the output terminal, and another terminal connected to a signal line through which the power source potential is supplied. - View Dependent Claims (6, 7, 8)
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9. A semiconductor device comprising:
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an activation circuit, to which an activation signal output from an outside of the semiconductor device is input, that operates at an operation voltage within a range that is equal to or more than a ground potential of a connected external battery and is equal to or lower than a power source potential of the battery, and that outputs an inner activation signal based on the activation signal; a regulator, to which the inner activation signal is input, that generates and outputs a driving voltage from the power source potential; a boosting circuit, connected to the regulator, that generates and outputs a boosted voltage that is equal to or more than the driving voltage; a driving circuit, connected to the boosting circuit, that operates at an operation voltage within a range that is equal to or more than the power source potential and is equal to or lower than a potential of the boosted voltage, and that outputs the activation signal to another semiconductor device according to the inner activation signal; a first communication circuit, to which a first communication signal output from the outside is input, that operates at an operation voltage within a range that is equal to or more than the ground potential and is equal to or lower than a potential of the driving voltage, and that outputs an inner communication signal based on the first communication signal; and a second communication circuit, to which the inner communication signal is input, that operates at an operation voltage within a range that is equal to or more than the power source potential and is equal to or lower than a potential of a driving voltage of the other semiconductor device, and that outputs a second communication signal based on the inner communication signal to the other semiconductor device, wherein the driving circuit comprises a first driving circuit that outputs a first activation signal, and a second driving circuit that outputs a second activation signal that is in a complementary relationship with respect to the first activation signal, and wherein the activation circuit outputs the inner activation signal based on a potential difference between the first activation signal and the second activation signal. - View Dependent Claims (10, 11, 12)
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Specification