Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region
First Claim
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1. A nonvolatile charge trap memory device, comprising:
- a gate stack disposed above a channel region of a substrate, wherein the gate stack comprises a multi-layer charge-trapping region comprising a first layer and a second layer that is deuterium-free, the first layer disposed between the channel region and the second layer, wherein the first layer comprises a first deuterium concentration, and wherein the multi-layer charge-trapping region further comprises a third layer, the second layer is disposed between the first layer and the third layer, wherein the third layer comprises a second deuterium concentration, and wherein a first abrupt interface is defined by a junction that separates a finite deuterium concentration of the first layer from a zero deuterium concentration of the second layer.
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Abstract
A nonvolatile charge trap memory device is described. The device includes a substrate having a channel region. A gate stack is disposed above the substrate over the channel region. The gate stack includes a multi-layer charge-trapping region having a first deuterated layer. The multi-layer charge-trapping region may further include a deuterium-free charge-trapping layer.
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Citations
18 Claims
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1. A nonvolatile charge trap memory device, comprising:
a gate stack disposed above a channel region of a substrate, wherein the gate stack comprises a multi-layer charge-trapping region comprising a first layer and a second layer that is deuterium-free, the first layer disposed between the channel region and the second layer, wherein the first layer comprises a first deuterium concentration, and wherein the multi-layer charge-trapping region further comprises a third layer, the second layer is disposed between the first layer and the third layer, wherein the third layer comprises a second deuterium concentration, and wherein a first abrupt interface is defined by a junction that separates a finite deuterium concentration of the first layer from a zero deuterium concentration of the second layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 15)
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9. A nonvolatile charge trap memory device, comprising:
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a gate stack disposed over a channel region of a substrate, wherein the gate stack comprises; a tunnel layer on a top surface of the substrate over the channel region; and a multi-layer charge-trapping region having a first deuterated layer on the tunnel layer and a second deuterium-free charge-trapping layer on the first deuterated layer, wherein the second deuterium-free charge-trapping layer comprises a trap-dense, oxygen-lean nitride layer and includes a majority of charge traps distributed in the multi-layer charge-trapping region, and wherein a first abrupt interface is defined by a junction that separates a finite deuterium concentration of the first deuterated layer from a zero deuterium concentration of the second deuterium-free charge-trapping layer. - View Dependent Claims (10, 11, 12, 13, 14)
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16. A method comprising:
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forming a tunnel dielectric layer on a top surface of a substrate; and forming a multi-layer charge trapping region on the top surface of the tunnel dielectric layer, wherein the multi-layer charge trapping region comprises a first layer and a second layer, the first layer disposed between the tunnel dielectric layer and the second layer, wherein the first layer comprises a first deuterium concentration, and wherein the multi-layer charge-trapping region further comprises a third layer, wherein the second layer is between the first layer and the third layer and deuterium-free, wherein the third layer comprises a second deuterium concentration, and wherein a first abrupt interface is defined by a junction that separates a finite deuterium concentration of the first layer from a zero deuterium concentration of the second layer. - View Dependent Claims (17)
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18. The method of 16, wherein a second abrupt interface is defined by a junction that separates a finite deuterium concentration of the third layer from the zero deuterium concentration of the second layer.
Specification