Gas distribution system, reactor including the system, and methods of using the same

• US 10,167,557 B2
• Filed: 03/18/2014
• Issued: 01/01/2019
• Est. Priority Date: 03/18/2014
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Hawkins, Mark, Halleck, Bradley Leonard, Kirschenheiter, Tom, Hossa, Benjamin, Pottebaum, Clay, Miskys, Claudio
• Primary Examiner(s): Zervigon, Rudy
• Application Number:
  US14/218,690
• Publication Number:
  US 20150267299A1
• Time in Patent Office: 1,750 Days
• Field of Search: 118715, 15634533
• CPC Class Codes: C23C 16/45502 Flow conditions in reaction chamber
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: Y10T 137/87249 Multiple inlet with multiple outlet
• CPC Class Codes: Y10T 137/87877 Single inlet with multiple distinctly valved outlets

Abstract

A gas distribution system, a reactor system including the gas distribution system, and method of using the gas distribution system and reactor system are disclosed. The gas distribution system can be used in gas-phase reactor systems to independently fine tune gas source locations and gas flow rates of reactants to a reaction chamber of the reactor systems.

Claims

1. A gas distribution system comprising:

a flange;

an opening within the flange to receive a substrate;

a plurality of first gas expansion ports formed within the flange;

a plurality of second gas expansion ports formed within the flange;

a plurality of first gas channels formed within the flange, wherein each of the plurality of first gas channels terminates at one of the first gas expansion ports;

a plurality of second gas channels formed within the flange, wherein each of the plurality of second gas channels terminates at one of the second gas expansion ports;

a plurality of first gas lines coupled to the one or more first gas channels and to a first gas source comprising a first gas;

a plurality of first gas valves coupled to the plurality of first gas lines and the and the one or more first gas channels;

a plurality of second gas lines coupled to the one or more second gas channels and to a second gas source comprising a second gas;

a plurality of second gas valves coupled to the plurality of second gas lines and the and the one or more second gas channels;

a plurality of first conduits; and

a plurality of second conduits,

wherein each first conduit is in fluid communication between one of the first gas expansion ports and a reaction chamber,

wherein each second conduit is in fluid communication between one of the second gas expansion ports and the reaction chamber,

wherein a flowrate of the first gas to each of the first gas expansion ports is independently adjusted using one of the plurality of first gas valves prior to the first gas entering the flange,

wherein a flowrate of the second gas to each of the second gas expansion ports is independently adjusted using one of the plurality of second gas valves prior to the second gas entering the flange,

wherein a plurality of first gas lines and a plurality of second gas lines are coupled to a top surface of the flange,

wherein the first gas and the second gas are not the same gas, and

wherein the first gas and second gas mix within the reaction chamber.

2. The gas distribution system of claim 1, wherein the plurality of channels are fluidly coupled to a precursor source.

3. The gas distribution system of claim 2, wherein the precursor source is selected from the group consisting of trichlorosilane, dichlorosilane, silane, disilane, and trisilane.

4. The gas distribution system of claim 1, wherein the plurality of second gas channels are coupled to a dopant source.

5. The gas distribution system of claim 4, wherein the dopant source is selected from one or more sources comprising As, P, C, Ge, and B.

6. The gas distribution system of claim 1, wherein at least one of the plurality of first gas expansion ports and at least one of the plurality of second gas expansion ports are adjacent.

7. The gas distribution system of claim 1, wherein at least one of the plurality of first gas expansion ports and at least one of the plurality of second gas expansion ports are adjacent in a front-to-back configuration.

8. The gas distribution system of claim 1, wherein the plurality of first gas valves comprises a plurality of independent control valves fluidly coupled to each of one or more first gas channels.

9. The gas distribution system of claim 1, wherein the plurality of second gas valves comprises a plurality of independent control valve fluidly coupled to each of the one or more second gas channels.

10. The gas distribution system of claim 1, wherein the plurality of the first gas lines are fluidly coupled together upstream of the flange.

11. The gas distribution system of claim 1, wherein the plurality of the second gas lines are fluidly coupled together upstream of the flange.

12. A gas-phase reactor system comprising:

a reaction chamber;

a gas distribution system comprising;

a flange;

an opening within the flange to receive a substrate;

a plurality of first gas expansion ports formed within the flange;

a plurality of second gas expansion ports formed within the flange;

a plurality of first gas channels formed within the flange, wherein each of the plurality of first gas channels terminates at one of the plurality of the first gas expansion ports; and

a plurality of second gas channels formed within the flange, wherein each of the plurality of second gas channels terminates at one or more of the second gas expansion ports;

an exhaust source;

a plurality of first gas lines coupled to a top surface of the flange and to a first gas source comprising a first gas;

a plurality of second gas lines coupled to the top surface of the flange and to a second gas source comprising a second gas;

a first gas source fluidly coupled to the plurality of first gas channels;

a second gas source fluidly coupled to the plurality of second gas channels;

a plurality of first gas valves coupled to the plurality of first gas lines and the plurality of first gas channels; and

a plurality of second gas valves coupled to the plurality of second gas lines and the plurality of second gas channels,

wherein a flowrate of the first gas to each of the first gas expansion ports is independently adjusted using one of the plurality of first gas valves prior to the first gas entering the flange,

wherein a flowrate of the second gas to each of the second gas expansion ports is independently adjusted using one of the plurality of second gas valves prior to the second gas entering the flange,

wherein the first gas and the second gas are not the same gas, and

wherein the first gas and the second gas mix in the reaction chamber.

13. The gas-phase reactor of claim 12, wherein the gas-phase reactor system comprises an epitaxial reactor.

14. The gas-phase reactor of claim 12, wherein the gas-phase reactor system comprises a horizontal flow reactor.

15. The gas-phase reactor of claim 12, wherein a number of the plurality of first gas expansion ports is greater than or equal to three.

16. The gas-phase reactor of claim 15, wherein the number of the plurality of first gas expansion ports is greater than or equal to five.

17. The gas-phase reactor of claim 12, wherein the gas distribution system is between a substrate handling system and the reaction chamber.