Plasma processing apparatus
First Claim
1. A plasma processing apparatus comprising:
- a processing container;
a gas supply unit configured to supply a processing gas into the processing container;
an electrostatic chuck located within the processing container, and configured to mount a to-be-processed substrate thereon;
a mounting table located below the electrostatic chuck and is configured to support the electrostatic chuck;
an upper electrode located at an upper side of the electrostatic chuck;
a plasma generation unit configured to supply a high frequency power to at least one of the upper electrode and the mounting table to generate plasma of the processing gas within the processing container;
an exhaust flow path formed by a side wall of the processing container and a side surface of the mounting table;
an electrically conductive rectification plate located in the exhaust flow path, and configured to adjust a flow of the processing gas that is discharged to outside of the processing container by the exhaust flow path; and
a first electrical conductor and a second electrical conductor arranged in the exhaust flow path at a position higher than the rectification plate and lower than the to-be-processed substrate to face at least a part of the upper electrode, a distance of the first electrical conductor and the second electrical conductor in a height direction in relation to a to-be-processed surface of the to-be-processed substrate being set to be within a predetermined range,wherein the first electrical conductor is located on the side surface of the mounting table and separate from the side wall of the processing container,wherein the second electrical conductor is located on the side wall of the processing container and separate from the side surface of the mounting table, andwherein the first electrical conductor and the second electrical conductor are arranged to overlap with each other in a central area of the exhaust flow path.
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Accused Products
Abstract
A plasma processing apparatus includes: a processing container; a processing gas supply unit; a mounting table configured to mount a to-be-processed substrate thereon; an upper electrode provided above the mounting table; a plasma generation unit configured to supply a high frequency power to generate plasma of the processing gas; an exhaust flow path formed by a side wall of the processing container and a side surface of the mounting table; a conductive rectification plate configured to adjust a flow of the processing gas discharged to outside of the processing container; a conductor arranged in the exhaust flow path at a position higher than the rectification plate and lower than the to-be-processed substrate to face at least a part of the upper electrode. A distance of the conductor in the height direction in relation to the to-be-processed surface of the substrate is set to be within a predetermined range.
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Citations
3 Claims
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1. A plasma processing apparatus comprising:
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a processing container; a gas supply unit configured to supply a processing gas into the processing container; an electrostatic chuck located within the processing container, and configured to mount a to-be-processed substrate thereon; a mounting table located below the electrostatic chuck and is configured to support the electrostatic chuck; an upper electrode located at an upper side of the electrostatic chuck; a plasma generation unit configured to supply a high frequency power to at least one of the upper electrode and the mounting table to generate plasma of the processing gas within the processing container; an exhaust flow path formed by a side wall of the processing container and a side surface of the mounting table; an electrically conductive rectification plate located in the exhaust flow path, and configured to adjust a flow of the processing gas that is discharged to outside of the processing container by the exhaust flow path; and a first electrical conductor and a second electrical conductor arranged in the exhaust flow path at a position higher than the rectification plate and lower than the to-be-processed substrate to face at least a part of the upper electrode, a distance of the first electrical conductor and the second electrical conductor in a height direction in relation to a to-be-processed surface of the to-be-processed substrate being set to be within a predetermined range, wherein the first electrical conductor is located on the side surface of the mounting table and separate from the side wall of the processing container, wherein the second electrical conductor is located on the side wall of the processing container and separate from the side surface of the mounting table, and wherein the first electrical conductor and the second electrical conductor are arranged to overlap with each other in a central area of the exhaust flow path. - View Dependent Claims (2, 3)
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Specification