Fan-out structure and method of fabricating the same
First Claim
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1. A method comprising:
- attaching a first semiconductor die and a first dummy die to a carrier, wherein a thickness of the first semiconductor die is greater than a thickness of the first dummy die, and wherein a first sidewall of the first dummy die is adjacent to the first semiconductor die, and a second sidewall of the first dummy die is parallel with the first sidewall and the second sidewall is a farthest sidewall with respect to the first semiconductor die;
forming a first molding compound layer over the carrier, the first molding compound layer extending along sidewalls of the first semiconductor die and the first dummy die; and
forming a first interconnect structure over the first molding compound layer, wherein;
the first interconnect structure comprises a first metal feature electrically coupled to the first semiconductor die;
the first interconnect structure comprises a second metal feature directly over the first dummy die, and wherein the second metal feature extends over and laterally overlaps the second sidewall of the first dummy die; and
the first molding compound layer is formed between the first dummy die and the first metal feature and wherein the second metal feature of the first interconnect structure and the first dummy die are separated only by dielectric materials.
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Abstract
A semiconductor structure and a method of forming include a first semiconductor die and a first dummy die over a carrier, wherein a thickness of the first semiconductor die is greater than a thickness of the first dummy die, a first molding compound layer over the carrier, the first molding compound layer extending along sidewalls of the first semiconductor die and the first dummy die and a first interconnect structure over the first molding compound layer, wherein the first interconnect structure comprises a first metal feature electrically coupled to the first semiconductor die and the first molding compound layer is formed between the first dummy die and the first metal feature.
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Citations
20 Claims
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1. A method comprising:
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attaching a first semiconductor die and a first dummy die to a carrier, wherein a thickness of the first semiconductor die is greater than a thickness of the first dummy die, and wherein a first sidewall of the first dummy die is adjacent to the first semiconductor die, and a second sidewall of the first dummy die is parallel with the first sidewall and the second sidewall is a farthest sidewall with respect to the first semiconductor die; forming a first molding compound layer over the carrier, the first molding compound layer extending along sidewalls of the first semiconductor die and the first dummy die; and forming a first interconnect structure over the first molding compound layer, wherein; the first interconnect structure comprises a first metal feature electrically coupled to the first semiconductor die; the first interconnect structure comprises a second metal feature directly over the first dummy die, and wherein the second metal feature extends over and laterally overlaps the second sidewall of the first dummy die; and the first molding compound layer is formed between the first dummy die and the first metal feature and wherein the second metal feature of the first interconnect structure and the first dummy die are separated only by dielectric materials. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method comprising:
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attaching a first side of a first semiconductor die and a first side of a first dummy die to a carrier, wherein a first sidewall of the first dummy die is adjacent to the first semiconductor die, and a second sidewall of the first dummy die is parallel with the first sidewall and the second sidewall is a farthest sidewall with respect to the first semiconductor die, and wherein; a thickness of the first semiconductor die is greater than a thickness of the first dummy die; forming a first molding compound layer over the carrier, wherein a second side of the first semiconductor die and a second side the first dummy die are covered by the first molding compound layer; performing a thinning process on the first molding compound layer until a surface of the second side of the first semiconductor die is exposed, wherein the first dummy die remains covered by the first molding compound layer after the thinning process; depositing a dielectric layer over and in contact with the first molding compound layer; and after the step of depositing a dielectric layer, forming a first interconnect structure over and in contact with the dielectric layer, wherein a metal feature of the first interconnect structure extends over and laterally overlaps the second sidewall of the first dummy die, and the second side of the first dummy die and the metal feature of the first interconnect structure are separated by the first molding compound layer. - View Dependent Claims (15)
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12. The method of claim ii, further comprising:
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mounting a second semiconductor die and a second dummy die over the first interconnect structure, wherein a thickness of the second semiconductor die is greater than a thickness of the second dummy die; forming a second molding compound layer over the first interconnect structure, the second molding compound layer extending along sidewalls of the second semiconductor die and the second dummy die; and forming a second interconnect structure over the second molding compound layer, wherein the second dummy die and the second interconnect structure are separated by the second molding compound layer. - View Dependent Claims (13, 14)
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16. An apparatus comprising:
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a first semiconductor die and a first dummy die in a first molding compound layer, wherein a first sidewall of the first dummy die is adjacent to the first semiconductor die, and a second sidewall of the first dummy die is parallel with the first sidewall and the second sidewall is a farthest sidewall with respect to the first semiconductor die, and wherein; a thickness of the first semiconductor die is greater than a thickness of the first dummy die; and a first side of the first semiconductor die is substantially level with a first side of the first dummy die; a first interconnect structure over the first molding compound layer, wherein; the first interconnect structure comprises a first metal feature over the first semiconductor die and a second metal feature directly over the first dummy die, and the second metal feature laterally overlaps the second sidewall of the first dummy die; a second side of the first semiconductor die is in contact with the first metal feature of the first interconnect structure; and a second side of the first dummy die and the second metal feature of the first interconnect structure are separated only by dielectric materials; and a plurality of bumps over the first interconnect structure. - View Dependent Claims (17, 18, 19, 20)
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Specification