Semiconductor device comprising a transistor cell including a source contact in a trench, method for manufacturing the semiconductor device and integrated circuit
First Claim
1. A method of manufacturing a semiconductor device comprising a transistor cell in a semiconductor substrate having a first main surface and a second main surface, the method comprising:
- forming a source region;
forming a source contact electrically connected to the source region, the source contact comprising a first source contact portion and a second source contact portion, the second source contact portion being disposed at the second main surface;
forming a drain region;
forming a body region; and
forming a gate electrode in a gate trench in the first main surface adjacent to the body region, the gate electrode being configured to control a conductivity of a channel formed in the body region, a longitudinal axis of the gate trench extending in a first direction parallel to the first main surface,the source region, the body region and the drain region being disposed along the first direction,forming the first source contact portion comprises forming a source contact groove in the first main surface of the semiconductor substrate to a depth larger than a depth of the gate trench, and filling the source contact groove with a source conductive material such that the source conductive material is in direct contact with the source region, wherein the source conductive material extends partially into a first doped portion of the semiconductor substrate, and wherein the first doped portion includes a region arranged between the source conductive material and the second source contact portion;
forming the semiconductor substrate, wherein the semiconductor substrate comprises the first doped portion and a second doped portion having a same conductivity type, the first doped portion having a larger distance to the first main surface than the second doped portion, the first doped portion having a larger doping concentration than the second doped portion, the first doped portion being in direct contact with the first source contact portion; and
forming a drain contact electrically connected to the drain region, the drain contact being disposed in a drain contact groove, and wherein the drain contact groove at least partially extends into the second doped portion of the semiconductor substrate.
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Accused Products
Abstract
A semiconductor device and a method of manufacturing the same is provided. The semiconductor device including a transistor cell in a semiconductor substrate having a first main surface. The transistor cell includes a gate electrode in a gate trench in the first main surface adjacent to a body region. A longitudinal axis of the gate trench extends in a first direction parallel to the first main surface. A source region, a body region and a drain region are disposed along the first direction. A source contact comprises a first source contact portion and a second source contact portion. The second source contact portion is disposed at a second main surface of the semiconductor substrate. The first source contact portion includes a source conductive material in direct contact with the source region and a portion of the semiconductor substrate arranged between the source conductive material and the second source contact portion.
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Citations
12 Claims
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1. A method of manufacturing a semiconductor device comprising a transistor cell in a semiconductor substrate having a first main surface and a second main surface, the method comprising:
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forming a source region; forming a source contact electrically connected to the source region, the source contact comprising a first source contact portion and a second source contact portion, the second source contact portion being disposed at the second main surface; forming a drain region; forming a body region; and forming a gate electrode in a gate trench in the first main surface adjacent to the body region, the gate electrode being configured to control a conductivity of a channel formed in the body region, a longitudinal axis of the gate trench extending in a first direction parallel to the first main surface, the source region, the body region and the drain region being disposed along the first direction, forming the first source contact portion comprises forming a source contact groove in the first main surface of the semiconductor substrate to a depth larger than a depth of the gate trench, and filling the source contact groove with a source conductive material such that the source conductive material is in direct contact with the source region, wherein the source conductive material extends partially into a first doped portion of the semiconductor substrate, and wherein the first doped portion includes a region arranged between the source conductive material and the second source contact portion; forming the semiconductor substrate, wherein the semiconductor substrate comprises the first doped portion and a second doped portion having a same conductivity type, the first doped portion having a larger distance to the first main surface than the second doped portion, the first doped portion having a larger doping concentration than the second doped portion, the first doped portion being in direct contact with the first source contact portion; and forming a drain contact electrically connected to the drain region, the drain contact being disposed in a drain contact groove, and wherein the drain contact groove at least partially extends into the second doped portion of the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising:
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a semiconductor substrate having a first main surface; and a transistor cell in the semiconductor substrate, the transistor cell comprising; a source region; a source contact electrically connected to the source region, the source contact comprising a first source contact portion and a second source contact portion; a drain region; a drain contact electrically connected to the drain region, the drain contact being disposed in a drain contact groove; a body region; and a gate electrode in a gate trench in the first main surface adjacent to the body region, the gate electrode being configured to control a conductivity of a channel in the body region, a longitudinal axis of the gate trench extending in a first direction parallel to the first main surface, wherein the source region, the body region and the drain region being disposed along the first direction, the second source contact portion being disposed at a second main surface of the semiconductor substrate, and the first source contact portion comprising a source conductive material in direct contact with the source region and that extends partially into a first doped portion of the semiconductor substrate, wherein the first doped portion includes a region arranged between the source conductive material and the second source contact portion, the semiconductor substrate comprises the first doped portion and a second doped portion having a same conductivity type, the first doped portion having a larger distance to the first main surface than the second doped portion, the first doped portion having a larger doping concentration than the second doped portion, the first doped portion being in direct contact with the first source contact portion, and the drain contact groove at least partially extending into the second doped portion of the semiconductor substrate.
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Specification