Substrate processing apparatus and substrate processing method
First Claim
1. A substrate processing apparatus, comprising:
- a chamber;
an inlet configured to introduce a gas for etching into the chamber;
a first electrode disposed in the chamber and having a main surface for placing a substrate thereon;
a second electrode disposed in the chamber and facing the first electrode;
a radio frequency (RF) power source configured to apply a RF voltage to the first electrode to generate ions of the gas, the RF voltage having a frequency of 40 MHz or higher; and
a voltage pulse generator configured to superimpose a voltage waveform on the RF voltage applied to the first electrode to lead the ions onto the substrate for its etching,the voltage waveform having a first period and a second period alternately repeated,the first period including N1 negative voltage pulses with a frequency of ω
1 and break times t1 of 0.2 μ
sec or less between the voltage pulses,the second period being a break time t2 lacking a voltage pulse, the break time t2 being longer than each break time t1, andthe voltage waveform having a voltage level of zero in the break times t1 and t2.
5 Assignments
0 Petitions
Accused Products
Abstract
There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.
-
Citations
4 Claims
-
1. A substrate processing apparatus, comprising:
-
a chamber; an inlet configured to introduce a gas for etching into the chamber; a first electrode disposed in the chamber and having a main surface for placing a substrate thereon; a second electrode disposed in the chamber and facing the first electrode; a radio frequency (RF) power source configured to apply a RF voltage to the first electrode to generate ions of the gas, the RF voltage having a frequency of 40 MHz or higher; and a voltage pulse generator configured to superimpose a voltage waveform on the RF voltage applied to the first electrode to lead the ions onto the substrate for its etching, the voltage waveform having a first period and a second period alternately repeated, the first period including N1 negative voltage pulses with a frequency of ω
1 and break times t1 of 0.2 μ
sec or less between the voltage pulses,the second period being a break time t2 lacking a voltage pulse, the break time t2 being longer than each break time t1, and the voltage waveform having a voltage level of zero in the break times t1 and t2. - View Dependent Claims (2, 3, 4)
-
Specification