High speed photosensitive devices and associated methods
First Claim
1. A method for configuring an optoelectronic device for light detection and ranging, the method comprising:
- doping at least two regions in a silicon optoelectronic device material to form at least one depletion region, wherein the silicon optoelectronic device material exhibits a thickness in a range of about 1 micron to about 100 microns and comprises a surface for receiving incident radiation;
providing an infrared optical band pass filter for reducing unwanted ambient light; and
texturing the silicon material to form a textured region positioned to interact with electromagnetic radiation so as to increase the quantum efficiency of the optoelectronic device,wherein the optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a quantum efficiency of greater than or equal to about 40% for electromagnetic radiation having a wavelength of about 940 nm.
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Abstract
High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.
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Citations
12 Claims
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1. A method for configuring an optoelectronic device for light detection and ranging, the method comprising:
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doping at least two regions in a silicon optoelectronic device material to form at least one depletion region, wherein the silicon optoelectronic device material exhibits a thickness in a range of about 1 micron to about 100 microns and comprises a surface for receiving incident radiation; providing an infrared optical band pass filter for reducing unwanted ambient light; and texturing the silicon material to form a textured region positioned to interact with electromagnetic radiation so as to increase the quantum efficiency of the optoelectronic device, wherein the optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a quantum efficiency of greater than or equal to about 40% for electromagnetic radiation having a wavelength of about 940 nm.
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2. A system for performing light detection and ranging, comprising:
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a silicon optoelectronic device material exhibiting a thickness in a range of about 1 micron to about 100 microns and having a surface for receiving incident radiation; a first doped region and a second doped region forming at least one depletion region in the silicon material; an infrared optical bandpass filter for reducing unwanted ambient light; and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation so as to increase the quantum efficiency of the optoelectronic device, wherein the optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a quantum efficiency of greater than or equal to about 40% for electromagnetic radiation having a wavelength of about 940 nm. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification