Methods for reducing scratch defects in chemical mechanical planarization
First Claim
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1. A method of forming a semiconductor device, the method comprising:
- providing a precursor having a substrate and protrusions over the substrate, the protrusions being interposed by trenches;
depositing a first dielectric layer over the protrusions and filling the trenches, the first dielectric layer having a first hardness;
treating the first dielectric layer with an oxidizer, resulting in a treated portion of the first dielectric layer;
after the treating of the first dielectric layer, depositing a second dielectric layer over the treated portion of the first dielectric layer, wherein the second dielectric layer has a second hardness higher than the first hardness; and
performing a chemical mechanical planarization (CMP) process to both the first dielectric layer and the second dielectric layer to completely remove the second dielectric layer and to partially remove the treated portion of the first dielectric layer,wherein the treating of the first dielectric layer is performed at a temperature ranging from 15°
C. to 90°
C. and the oxidizer is dilute hydrofluoric acid (DHF) and a concentration of hydrofluoric acid in the oxidizer ranges from 0.005% to 0.1%.
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Abstract
Disclosed is a method of forming a semiconductor device. The method includes providing a precursor having a substrate and protrusions over the substrate. The protrusions are interposed by trenches. The method further includes depositing a first dielectric layer over the protrusions and filling the trenches. The first dielectric layer has a first hardness. The method further includes treating the first dielectric layer with an oxidizer. The method further includes performing a chemical mechanical planarization (CMP) process to the first dielectric layer.
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Citations
20 Claims
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1. A method of forming a semiconductor device, the method comprising:
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providing a precursor having a substrate and protrusions over the substrate, the protrusions being interposed by trenches; depositing a first dielectric layer over the protrusions and filling the trenches, the first dielectric layer having a first hardness; treating the first dielectric layer with an oxidizer, resulting in a treated portion of the first dielectric layer; after the treating of the first dielectric layer, depositing a second dielectric layer over the treated portion of the first dielectric layer, wherein the second dielectric layer has a second hardness higher than the first hardness; and performing a chemical mechanical planarization (CMP) process to both the first dielectric layer and the second dielectric layer to completely remove the second dielectric layer and to partially remove the treated portion of the first dielectric layer, wherein the treating of the first dielectric layer is performed at a temperature ranging from 15°
C. to 90°
C. and the oxidizer is dilute hydrofluoric acid (DHF) and a concentration of hydrofluoric acid in the oxidizer ranges from 0.005% to 0.1%. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a semiconductor device, the method comprising:
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providing a precursor having a substrate and fins over the substrate, the fins being interposed by trenches; depositing a first dielectric layer over the fins and filling the trenches, the first dielectric layer containing silicon and oxygen and having a first hardness; treating the first dielectric layer with an aqueous oxidizer, resulting in a treated portion of the first dielectric layer above an untreated portion of the first dielectric layer, the treated portion of the first dielectric layer having a second hardness greater than the first hardness; depositing a second dielectric layer over the treated portion of the first dielectric layer, wherein the second dielectric layer contains silicon and oxygen and has a third hardness higher than the first hardness; and performing a chemical mechanical planarization (CMP) process to completely remove the second dielectric layer and partially remove the treated portion of the first dielectric layer, wherein the treating of the first dielectric layer is performed at a temperature ranging from 15 degrees Celsius (°
C.) to 90°
C. - View Dependent Claims (11, 12, 13, 14)
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15. A method of forming a semiconductor device, the method comprising:
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providing a precursor having a substrate and protrusions over the substrate, the protrusions being interposed by trenches; depositing a first dielectric layer over the protrusions and filling the trenches, the first dielectric layer containing silicon and oxygen; treating the first dielectric layer with an aqueous oxidizer at a temperature lower than 100 degrees Celsius (°
C.), resulting in a treated portion of the first dielectric layer;depositing a second dielectric layer over the treated portion, wherein the second dielectric layer contains silicon and oxygen; and performing a chemical mechanical planarization (CMP) process to completely remove the second dielectric layer and partially remove the treated portion of the first dielectric layer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification