Buried channel semiconductor device and method for manufacturing the same
First Claim
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1. A semiconductor device comprising:
- one or more fins extending in a first direction over a substrate,wherein the one or more fins include a first region along the first direction and second regions on either side of the first region along the first direction, and the first region of the fins includes a dopant in a concentration of about 1.7×
1019 to 2.0×
1020 atoms cm−
3, andthe dopant is centered at a region in each fin located at about 15 to 20 nm from a top of the fin and 3 to 7 nm in a fin thickness direction from a sidewall extending along the first direction of each fin;
a gate structure overlies the first region of the one or more fins; and
source/drains are formed on the second regions of the one or more fins.
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Abstract
A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is implanted in the first region of the fins but not in the second regions. A gate structure overlies the first region of the fins and source/drains are formed on the second regions of the fins.
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Citations
20 Claims
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1. A semiconductor device comprising:
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one or more fins extending in a first direction over a substrate, wherein the one or more fins include a first region along the first direction and second regions on either side of the first region along the first direction, and the first region of the fins includes a dopant in a concentration of about 1.7×
1019 to 2.0×
1020 atoms cm−
3, andthe dopant is centered at a region in each fin located at about 15 to 20 nm from a top of the fin and 3 to 7 nm in a fin thickness direction from a sidewall extending along the first direction of each fin; a gate structure overlies the first region of the one or more fins; and source/drains are formed on the second regions of the one or more fins. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A Gilbert-cell mixer comprising:
a plurality of transistors electrically connected to each other, wherein at least one of the transistors comprises; one or more fins extending in a first direction over a substrate, wherein the one or more fins include a first region along the first direction and second regions on either side of the first region along the first direction, and the first region of the fins includes a dopant centered at a region in each fin located at about 15 to 20 nm from a top of each fin and 3 to 7 nm in a fin thickness direction from a sidewall extending along the first direction of each fin, wherein a concentration of the dopant is about 1.7×
1019 to 2.0×
1020 atoms cm−
3;
a gate structure overlying the first region of the one or more fins; and
source/drains formed on the second regions of the one or more fins.- View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A buried-channel fin field effect transistor comprising:
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one or more fins extending in a first direction over a substrate, wherein the one or more fins include a channel region along the first direction and source/drain regions on either side of the channel region along the first direction, and the channel region of the one or more fins includes a dopant centered at region in each fin located at about 15 to 20 nm from a top of each fin and 3 to 7 nm in a fin thickness direction from a sidewall extending along the first direction of each fin, wherein a concentration of the dopant in the first region is about 1.7×
1019 to 2.0×
1020 atoms cm−
3; anda gate structure overlying the first region of the one or more fins. - View Dependent Claims (18, 19, 20)
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Specification